Several of these amplifiers have been built and exhibit similar performance. Al has been using his amplifier on each of the HF bands, logging well over 500 contacts in 18 months. Signal reports indicate a noticeable improvement in readability (about two S units on average) over his 5 W rig. No indications of instability, CW key clicks or distortion on SSB have been reported. To make it easy for you to duplicate this project, PC boards and parts kits are available, all at a cost of about $100!
Schematic diagram of the MOSFET all-band HF amplifier. Unless otherwise specified, resistors are 1/4 W, 5% tolerance carbon-composition or film units. Equivalent parts can be substituted.
C1-C8 = 0.1 μF chip (140-CC502Z104M)
C9 = 47 pF chip (140-CC502N470J)
C10 = 100 μF, 35 V (140-HTRL35V100)
C11, C13 = 15 μF, 35 V (140MLR35V10)
C12 = 1 μF, 50 V (140-MLRL50V1.0)
C14 = 2.2 μF, 35 V tantalum (581-2.2M35V)
C15 = 0.01 μF chip (140-CC502B103K)
C16, C17 = 0.001 μF chip (140-CC502B102K)
D1 = 1N4733A, 5.1 V, 1 W Zener diode (583-1N4733A)
D4 = 1N4004A(583-1N4004A)
D2, D3 = 1N4148 (583-1N4148)
D5 = 1N4744A, 15 V, 1 W Zener diode (583-1N4744A)
J1, J2 = SO-239 UHF connector (523-81-120)
K1 = 12 V DPDT, 960 Ω coil, 12.5 mA (431-OVR-SH-212L)
L1, L2 = 91/2 turns #24 enameled wire, closely wound 0.25-in. ID
L3 = 31/2 turns #24 enameled wire, closely wound 0.190-in. ID
Q1, Q2 = IRF510 power MOSFET (570-IRF510)
Q3 = 2N3904 (610-2N3904)
R1, R2 = 10 kΩ trim pot (323-5000-10K)
R3, R4 = 27 Ω, 1/2 W (293-27)
R6 = 1 kΩ chip (263-1K)
R7 = 4.7 kΩ chip (263-4.7K)
R8 = 130 Ω, 1 W (281-130); for 7 dB pad (5 W in, 1 W out)
R9 = 43 Ω, 2 W (282-43); for 7 dB pad (5 W in, 1 W out)
R10 = 130 Ω, 3 W (283-130); for 7 dB pad (5 W in, 1 W out)
R8, R10—300 Ω, 1/2 W (273-300); for 3 dB pad (2 W in, 1 W out)
R9 = 18 Ω, 1 W (281-18); for 3 dB pad (2 W in, 1 W out)
R11 = 2.4 kΩ, 1/2 W (293-2.4K)
T1 = 10 bifilar turns #24 enameled wire on an FT-50-43 core.
T2 = 10 bifilar turns #22 enameled wire on two stacked FT-50-43 cores.
T3 = Pri 2 turns, sec 3 turns #20 Teflon covered wire on BN-43-3312 balun core.
Low-cost broadband HF amplifier based MOSFET IRF510, download the complete explanation here This is a demonstration about 01A RF Amplifier which is build used old tube component to amplify the signal.
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